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Erratum: “Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy” [Appl. Phys. Lett. 117, 051601 (2020)]: Applied Physics Letters: Vol 117, No 9
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PDF) Tellurite glass lasers operating close to 2 μ m | David Binks - Academia.edu
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Passively Q-switched 1.33 μm Nd:GAGG laser with Co2+:LMA saturable absorber
Blue‐green laser diodes: Applied Physics Letters: Vol 59, No 11
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Single atom movement with dynamic holographic optical tweezers | Центр квантовых технологий
Toward lasers powerful enough to investigate a new kind of physics
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PDF) Laser on single-crystal ZnSe:Fe 2+ with high pulse radiation energy at room temperature
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